1) maximum rated values are those values beyond which damage to the device may occur abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v dsm = 1400 v i tavm = 1960 a i trms = 3080 a i tsm = 25000 a v t0 =0.75 v r t = 0.157 m ? ? ? ? phase control thyristor 5stp 21f1400 doc. no. 5sya1023-04 jan. 02 ? ? ? ? patented free-floating silicon technology ? ? ? ? low on-state and switching losses ? ? ? ? designed for traction, energy and industrial applications ? ? ? ? optimum power handling capability blocking maximum rated values 1) symbol conditions 5stp 21f1400 5stp 21f1200 5stp 21f0800 v drm, v rrm f = 50 hz, t p = 10 ms 1400 v 1200 v 800 v v rsm t p = 5 ms, single pulse 1600 v 1400 v 1000 v dv/dt crit exp. to 0.67 x v drm , t vj = 125c 200 v/s characteristic values parameter symbol conditions min typ max unit forward leakage current i drm v drm , t vj = 125c 200 ma reverse leakage current i rrm v rrm , t vj = 125c 200 ma mechanical data maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 14 22 24 kn acceleration a device unclamped 50 m/s 2 acceleration a device clamped 100 m/s 2 characteristic values parameter symbol conditions min typ max unit weight m 0.6 kg surface creepage distance d s 25 mm air strike distance d a 14 mm
5stp 21f1400 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1023-04 jan. 02 page 2 of 6 on-state maximum rated values 1) parameter symbol conditions min typ max unit average on-state current i tavm half sine wave, t c = 70c 1960 a rms on-state current i trms 3080 a peak non-repetitive surge current i tsm 25000 a limiting load integral i 2 t tp = 10 ms, t vj = 125c, v d = v r = 0 v 3125 ka 2 s peak non-repetitive surge current i tsm 26000 a limiting load integral i 2 t tp = 8.3 ms, t vj = 125c, v d = v r =0 v 2805 ka 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v t i t = 3000 a, t vj = 125c 1.22 v threshold voltage v t0 0.75 v slope resistance r t i t = 1000 a - 3000 a, t vj = 125c 0.157 m ? holding current i h t vj = 25c 70 ma t vj = 125c 60 ma latching current i l t vj = 25c 350 ma t vj = 125c 120 ma switching maximum rated values 1) parameter symbol conditions min typ max unit critical rate of rise of on- state current di/dt crit cont. f = 50 hz 200 a/s critical rate of rise of on- state current di/dt crit t vj = 125c, i trm = 2000 a, v d 0.67 v drm , i fg = 2 a, t r = 0.5 s cont. f = 1hz 1000 a/s circuit-commutated turn-off time t q t vj = 125c, i trm = 2000 a, v r = 200 v, di t /dt = -20 a/s, v d 0.67 ? v drm , dv d /dt = 20 v/s, 400 s characteristic values parameter symbol conditions min typ max unit recovery charge q rr t vj = 125c, i trm = 2000 a, v r = 200 v, di t /dt = -20 a/s 1800 3000 as delay time t d v d = 0.4 ? v drm , i fg = 2 a, t r = 0.5 s 3s
5stp 21f1400 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1023-04 jan. 02 page 3 of 6 triggering maximum rated values 1) parameter symbol conditions min typ max unit peak forward gate voltage v fgm 12 v peak forward gate current i fgm 10 a peak reverse gate voltage v rgm 10 v gate power loss p g for dc gate current 3 w average gate power loss p gav see fig. 9 characteristic values parameter symbol conditions min typ max unit gate trigger voltage v gt t vj = 25c 2.6 v gate trigger current i gt t vj = 25c 400 ma gate non-trigger voltage v gd v d = 0.4 x v drm , t vjmax = 125c 0.3 v gate non-trigger current i gd v d = 0.4 x v drm , t vjmax = 125c 10 ma thermal maximum rated values 1) parameter symbol conditions min typ max unit operating junction temperature range t vj 125 c storage temperature range t stg -40 140 c characteristic values parameter symbol conditions min typ max unit thermal resistance junction to case r th(j-c) double-side cooled 17 k/kw r th(j-c)a anode-side cooled 33 k/kw r th(j-c)c cathode-side cooled 35 k/kw thermal resistance case to heatsink r th(c-h) double-side cooled 4 k/kw r th(c-h) single-side cooled 8 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i thjc i = i1 234 r i (k/kw) 10.35 3.76 2.29 0.67 i (s) 0.3723 0.0525 0.0057 0.0023 fig. 1 transient thermal impedance junction-to case.
5stp 21f1400 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1023-04 jan. 02 page 4 of 6 fig. 2 on-state characteristics. fig. 3 on-state characteristics. t j =125c, 10ms half sine fig. 4 on-state power dissipation vs. mean on-state current. turn - on losses excluded. fig. 5 max. permissible case temperature vs. mean on-state current.
5stp 21f1400 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1023-04 jan. 02 page 5 of 6 fig. 6 surge on-state current vs. pulse length. half- sine wave. fig. 7 surge on-state current vs. number of pulses. half-sine wave, 10 ms, 50hz. i gm i gon 100 % 90 % 10 % i gm 2..5 a i gon 1.5 i gt di g /dt 2 a/ s t r 1 s t p (i gm ) 5...20 s di g /dt t r t p (i gm ) i g (t) t t p (i gon ) fig. 8 recommended gate current waveform. fig. 9 max. peak gate power loss. fig. 10 recovery charge vs. decay rate of on-state current. fig. 11 peak reverse recovery current vs. decay rate of on-state current.
5stp 21f1400 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1023-04 jan. 02 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abbsem.com fig. 12 device outline drawing.
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